S10H038S mosfet equivalent, n-channel mosfet.
█ 100V,160A,Rds(on)(typ)=3.8mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability █ Split-Gate MOS Technology
General Descrip.
This Power MOSFET is produced using Si-Tech’s advanced Split-Gate MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low .
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