█100V,130A,Rds(on)(typ)=5m @Vgs=10V █High Ruggedness █Fast Switching █100% Avalanche Tested █Improved dv/dt Capability █ Split-Gate MOS Technology General Descripti.

This Power MOSFET is produced using Si-Tech’s advanced Split-Gate MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low .

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