* High ruggedness
* RDS(ON) (Max 7 Ω)@VGS=10V
* Gate Charge (Max 5nC)
* Improved dv/dt Capability
* 100% Avalanche Tested TO-251 TO-252 12 3 2 1 3.

This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteris.

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