* High ruggedness
* RDS(ON) (Max0.24Ω)@VGS=10V
* Gate Charge (Typical 13nC)
* Improved dv/dt Capability
* 100% Avalanche Tested SOT-23 3 2 1 1. Gate.

This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteris.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts