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SAMWIN

SW2N65B Datasheet Preview

SW2N65B Datasheet

N-channel MOSFET

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SAMWIN
SW2N65B
N-channel MOSFET
Features
TO-220F
High ruggedness
RDS(ON) (Max 5.6 )@VGS=10V
Gate Charge (Typical 7.7nC)
Improved dv/dt Capability
100% Avalanche Tested
12
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC converter
block and SMPS. It’s typical application is TV and monitor.
BVDSS : 650V
ID : 2.0A
RDS(ON) : 5.6ohm
2
1
3
Order Codes
Item
1
Sales Type
SW F 2N65B
Marking
SW2N65
Package
TO-220F
Packaging
TUBE
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthjc
Rthcs
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
650
2.0*
1.0*
8.4
± 30
145
20
4.5
16.7
0.13
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Value
7.4
-
50
Unit
oC/W
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jan. 2013. Rev. 2.0
1/5




SAMWIN

SW2N65B Datasheet Preview

SW2N65B Datasheet

N-channel MOSFET

No Preview Available !

SAMWIN
SW2N65B
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Off characteristics
BVDSS Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS Breakdown voltage temperature
/ ΔTJ coefficient
ID=250uA, referenced to 25oC
IDSS Drain to source leakage current
Gate to source leakage current, forward
IGSS
Gate to source leakage current, reverse
On characteristics
VDS=650V, VGS=0V
VDS=520V, TC=125oC
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
VGS(TH)
RDS(ON)
Gfs
Gate threshold voltage
Drain to source on state resistance
Forward Transconductance
VDS=VGS, ID=250uA
VGS=10V, ID = 1A
VDS = 40 V, ID = 1 A
Dynamic characteristics
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
td(on)
Turn on delay time
tr Rising time
td(off)
Turn off delay time
tf Fall time
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VGS=0V, VDS=25V, f=1MHz
VDS=325V, ID=2.0A, RG=25Ω
(note 4,5)
VDS=520V, VGS=10V, ID=
2.0A(note 4,5)
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
IS Continuous source current
ISM Pulsed source current
VSD Diode forward voltage drop.
Trr Reverse recovery time
Qrr Reverse recovery Charge
Integral reverse p-n Junction
diode in the MOSFET
IS=2.0A, VGS=0V
IS=2.0A, VGS=0V,
dIF/dt=100A/us
. Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2. L = 72.5mH, IAS = 2A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3. ISD ≤ 2A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5. Essentially independent of operating temperature.
Min.
650
-
-
-
-
-
2.0
1
-
-
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
Typ. Max. Unit
- -V
0.81
- V/oC
- 1 uA
- 10 uA
- 100 nA
- -100 nA
- 4.0 V
4.5 5.6
S
260
40 pF
12
9 35
23 40
ns
12 50
22 50
7.7 16
2.1 - nC
4.6 -
Typ.
-
-
-
351
1.5
Max.
2.0
8.4
1.5
-
-
Unit
A
A
V
ns
uC
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jan. 2013. Rev. 2.0
2/5


Part Number SW2N65B
Description N-channel MOSFET
Maker SAMWIN
Total Page 5 Pages
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