SW20N65K mosfet equivalent, mosfet.
* High ruggedness
* RDS(ON) (Max0.19Ω)@VGS=10V
* Gate Charge (Typical 60nC)
* Improved dv/dt Capability
* 100% Avalanche Tested
TO-220
TO-220F
12 3.
This power MOSFET is produced with advanced super-junction technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, excellent avalanche characteristics, low gate charge and especially in l.
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