* High ruggedness
* RDS(ON) (Max 0.27Ω)@VGS=10V
* Gate Charge (Typ 103 nC)
* Improved dv/dt Capability
* 100% Avalanche Tested TO-3P 12 3 1. Gate 2. .

This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteris.

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