RU6H2K mosfet equivalent, n-channel advanced power mosfet.
* 600V/2A,
RDS (ON) =4000mΩ(Typ.)@VGS=10V
* Gate charge minimized
* Low Crss( Typ. 5pF)
* Extremely high dv/dt capability
* 100% avalanche tested
.
* High efficiency switch mode power supplies
* Lighting
Pin Description
GDS TO251
D G
Absolute Maximum Ratings.
GDS TO251
D G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous .
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