RU6H10P mosfet equivalent, n-channel advanced power mosfet.
* 600V/10A, RDS (ON) =0.65Ω (Type) @ VGS=10V
* Gate charge minimized
* Low Crss( Typ. 15pF)
* Extremely high dv/dt capability
* 100% avalanche tested .
* High efficiency switch mode power supplies
* Electronic lamp ballasts based on half bridge
N-Channel MOSFET
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