RU6H1L mosfet equivalent, n-channel advanced power mosfet.
*600V/1.2A, RDS (ON) =10Ω (Typ.) @ VGS=10V
* Gate charge minimized
* Low Crss( Typ. 4pF)
* Extremely high dv/dt capability
* 100% avalanche tested
* High efficiency switch mode power supplies
* Lighting
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Par.
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