RU6888S mosfet equivalent, n-channel advanced power mosfet.
* 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V
* Ultra Low On-Resistance
* Exceptional dv/dt capability
* Fast Switching and Fully Avalanche Rated
* 100% a.
* Switching Application Systems
* Inverter Systems
Pin Description
TO-263 N-Channel MOSFET
Absolute Maximum Ra.
TO-263 N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode C.
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