RU6888M mosfet equivalent, n-channel advanced power mosfet.
* 60V/62A, RDS (ON) =7mΩ(Typ.)@VGS=10V
* Super High Dense Cell Design
* Reliable and Rugged
* 100% avalanche tested
* Lead Free and Green Devices Avai.
* Power Management.
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
V.
PDFN5060
Applications
* Power Management.
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temper.
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