* 60V/100A, RDS (ON) =7mΩ(Typ.)@VGS=10V
* Super High Dense Cell Design
* Ultra Low On-Resistance
* Low Gate Charge
* 100% avalanche tested
* Lead .

* Switching Application Systems
* Inverter Systems Pin Description TO-220 N-Channel MOSFET Absolute Maximum Ra.

TO-220 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode C.

RU60100R

RU60120R

RU60190R

RU60200R

RU60280R

RU602B

RU60450Q

RU6050L

RU6050R

RU6050S

RU6051K

RU6051L

RU6055

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