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RU20P4C6 Datasheet Preview

RU20P4C6 Datasheet

P-Channel Advanced Power MOSFET

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RU20P4C6
P-Channel Advanced Power MOSFET
Features
• -20V/-4A,
RDS (ON) =35m(Typ.)@VGS=-4.5V
RDS (ON) =45m(Typ.)@VGS=-2.5V
• Low On-Resistance
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• Load Switch
• Power Management
• Battery Protection
Pin Description
S
D
D
G
D
D
SOT23-6
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
IDContinuous Drain Current(VGS=-10V)
PD Maximum Power Dissipation
RJC Thermal Resistance-Junction to Case
RJAThermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
S
P-Channel MOSFET
Rating
Unit
TA=25°C
-20
±10
150
-55 to 150
-1.2
V
°C
°C
A
TA=25°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
-16 A
-4
A
-3.2
1.3
W
0.8
- °C/W
100 °C/W
TBD
mJ
Ruichips Semiconductor Co., Ltd
Rev. B– AUG., 2015
1
www.ruichips.com




Ruichips

RU20P4C6 Datasheet Preview

RU20P4C6 Datasheet

P-Channel Advanced Power MOSFET

No Preview Available !

RU20P4C6
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU20P4C6
Min. Typ. Max.
Static Characteristics
BVDSS
IDSS
VGS(th)
IGSS
RDS(ON)
Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA
Zero Gate Voltage Drain Current VDS=-20V, VGS=0V
TJ=125°C
Gate Threshold Voltage
VDS=VGS, IDS=-250µA
Gate Leakage Current
VGS=±10V, VDS=0V
Drain-Source On-state Resistance VGS=-4.5V, IDS=-4A
VGS=-2.5V, IDS=-3.2A
-20
-1
-30
-0.4 -1.1
±100
35 60
45 100
Diode Characteristics
VSD
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=-1A, VGS=0V
ISD=-4A, dlSD/dt=100A/µs
-1.2
15
21
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=-10V,
Frequency=1.0MHz
VDD=-10V, IDS=-4A,
VGEN=-4.5V,RG=6
0.9
630
125
65
9
16
45
21
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-16V, VGS=-4.5V,
IDS=-4A
10
1.8
2.9
Unit
V
µA
V
nA
m
m
V
ns
nC
pF
ns
nC
Notes:
Pulse width limited by safe operating area.
Calculated continuous current based on maximum allowable junction temperature.
When mounted on 1 inch square copper board, t10sec. The value in any given application
depends on the user's specific board design.
Limited by TJmax. Starting TJ = 25°C.
Pulse test;Pulse width300µs, duty cycle2%.
Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. B– AUG., 2015
2
www.ruichips.com


Part Number RU20P4C6
Description P-Channel Advanced Power MOSFET
Maker Ruichips
Total Page 8 Pages
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