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RU20P4C Datasheet Preview

RU20P4C Datasheet

P-Channel Advanced Power MOSFET

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RU20P4C
P-Channel Advanced Power MOSFET
MOSFET
Features
• -20V/-4A,
RDS (ON) =40m(Typ.) @ VGS=-4.5V
RDS (ON) =55m(Typ.) @ VGS=-2.5V
• Low RDS (ON)
• Super High Dense Cell Design
Reliable and Rugged
• Lead Free and Green Available
Pin Description
SOT-23-3
Applications
Power Management
Load Switch
Absolute Maximum Ratings
P-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TA=25°C
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
TA=25°C
ID
PD
RθJA
Continuous Drain Current
TA=25°C
TA=70°C
Maximum Power Dissipation
TA=25°C
TA=70°C
Thermal Resistance-Junction to Ambient
Rating
-20
±12
150
-55 to 150
-1.5
-16
-4
-3.2
1.3
0.8
100
Unit
V
°C
°C
A
A
A
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2011
www.ruichips.com




Ruichips

RU20P4C Datasheet Preview

RU20P4C Datasheet

P-Channel Advanced Power MOSFET

No Preview Available !

RU20P4C
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU20P4C
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
VGS=0V, IDS=-250µA
-20
VDS=-20V, VGS=0V
TJ=85°C
VDS=VGS, IDS=-250µA
-0.4
VGS=±10V, VDS=0V
RDS(ON)
Drain-Source On-state Resistance
VGS=-4.5V, IDS=-4A
VGS=-2.5V, IDS=-3A
-1
-30
-0.7 -1.1
±100
40 60
55 100
V
µA
V
nA
m
m
Diode Characteristics
VSD
Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
ISD=-1A, VGS=0V
ISD=-4A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=-10V,
Frequency=1.0MHz
VDD=-10V, RL=2.5,
IDS=-4A, VGEN=-4.5V,
RG=6
VDS=-16V, VGS=-4.5V,
IDS=-4A
-1 V
15 ns
8 nC
7.5
585
95 pF
50
8
11
ns
30
10
9 13
1.8
2.9
nC
Notes:
Pulse width limited by safe operating area.
When mounted on 1 inch square copper board, t 10sec. The value in any given application depends on
the user's specific board design.
Pulse test ; Pulse width300µs, duty cycle2%.
Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2011
2
www.ruichips.com


Part Number RU20P4C
Description P-Channel Advanced Power MOSFET
Maker Ruichips
Total Page 9 Pages
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