RU1HE16L datasheet, mosfet equivalent, Ruichips

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Features and benefits

* 100V/16A, RDS (ON) =70mΩ(Typ.)@VGS=10V RDS (ON) =85mΩ(Typ.)@VGS=4.5V
* Super High Dense Cell Design
* ESD protected
* Reliable and Rugged
* Lead Fre.

Application

* Power Management. N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless O.

Description

TO252 Applications
* Power Management. N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG .

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