RU1H130Q mosfet equivalent, n-channel advanced power mosfet.
*100V/130A,
RDS (ON) =7mΩ(Typ.)@VGS=10V
* Super High Dense Cell Design
* Ultra Low On-Resistance
* 100% avalanche tested
* Lead Free and Green Devices.
* High Efficiency Synchronous Rectification in SMPS
* High Speed Power Switching
Pin Description
G D S
TO247
D .
G D S
TO247
D G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuou.
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