RU1H300Q mosfet equivalent, n-channel advanced power mosfet.
* 100V/300A,
RDS (ON) =3mΩ(Typ.)@VGS=10V
* Ultra Low On-Resistance
* Exceptional dv/dt capability
* Fast Switching and Fully Avalanche Rated
* 100% av.
* High Efficiency Synchronous Rectification in SMPS
* High Speed Power Switching
* Power Supply
Pin Descrip.
G DS
TO247 D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous.
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