RU1H35S mosfet equivalent, n-channel advanced power mosfet.
* 100V/40A, RDS (ON) =21mΩ(Typ.)@VGS=10V
* Super High Dense Cell Design
* 100% avalanche tested
* Lead Free and Green Devices Available (RoHS Compliant)
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*Switching application
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unles.
TO-263
Applications
*Switching application
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
T.
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