RU1H35K mosfet equivalent, n-channel advanced power mosfet.
* 100V/40A, RDS (ON) =21mΩ(Typ.)@VGS=10V
* Super High Dense Cell Design
* 100% avalanche tested
* Lead Free and Green Devices Available (RoHS Compliant)
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* High Speed Power Switching
GDS TO251
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Un.
Applications
* High Speed Power Switching
GDS TO251
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
.
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