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RJP60D0DPP-M0 Datasheet, Renesas Technology

RJP60D0DPP-M0 igbt equivalent, silicon n-channel igbt.

RJP60D0DPP-M0 Avg. rating / M : 1.0 rating-14

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RJP60D0DPP-M0 Datasheet

Features and benefits


* Short circuit withstand time (5 s typ.)
* Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)
* Gate to em.

Application

or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.

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TAGS

RJP60D0DPP-M0
Silicon
N-Channel
IGBT
RJP60D0DPE
RJP60D0DPK
RJP60D0DPM
Renesas Technology

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