logo

RJP6065DPM Datasheet, Renesas

RJP6065DPM igbt equivalent, n-channel igbt.

RJP6065DPM Avg. rating / M : 1.0 rating-112

datasheet Download

RJP6065DPM Datasheet

Features and benefits


* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C)
* Gate to emitter voltage rating 30 V
* Pb-free lead pl.

Application

or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.

Image gallery

RJP6065DPM Page 1 RJP6065DPM Page 2 RJP6065DPM Page 3

TAGS

RJP6065DPM
N-Channel
IGBT
RJP6085DPK
RJP6085DPN
RJP60D0DPE
Renesas

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts