RJP60D0DPK igbt equivalent, silicon n-channel igbt.
* Short circuit withstand time (5 s typ.)
* Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)
* Gate to em.
or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.
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