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RJK03H1DPA Datasheet, Renesas Technology

RJK03H1DPA fet equivalent, built in sbd n channel power mos fet.

RJK03H1DPA Avg. rating / M : 1.0 rating-11

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RJK03H1DPA Datasheet

Features and benefits


* High speed switching
* Capable of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance
* Pb-free
* Halogen-free .

Application

for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; .

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.

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TAGS

RJK03H1DPA
Built
SBD
Channel
Power
MOS
FET
RJK0301DPB
RJK0302DPB
RJK0303DPB
Renesas Technology

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