RJK0323JPD fet equivalent, silicon n-channel mos fet.
* For Automotive application
* AEC-Q101 compliant
* Low on-resistance : RDS(on) = 7.0 mΩ typ.
* Low drive current
* Capable of 4.5 V gate drive
Outlin.
or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.
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