RJK0316DSP switching equivalent, silicon n channel power mos fet power switching.
*
*
*
*
* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 mΩ typ. (at VGS = 1.
such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the .
Image gallery
TAGS
Download