RJK03E6DPA fet equivalent, silicon n channel power mos fet.
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.8 m typ. (at VGS = 8 V)
* Pb-free
* Haloge.
or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.
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