RJK03E7DPA Datasheet, Renesas Technology

High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.3 m typ. (at VGS = 8 V)
* Pb-free
* Haloge.

or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.

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