RJK0353DSP switching equivalent, silicon n channel power mos fet power switching.
Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 mΩ typ. (at VGS = 10 V)
* Pb-free
*
*
*
*
Outline.
such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the .
Image gallery
TAGS
Download (Size : 145.22KB)