Datasheet Details
| Part number | RJK0206DPA |
|---|---|
| Manufacturer | Renesas |
| File Size | 106.53 KB |
| Description | Silicon N Channel Power MOS FET |
| Datasheet |
 RJK0206DPA Datasheet
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Description
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.
You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.
Features
- High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m typ. (at VGS = 10 V).
- Pb-free.
- Halogen-free.
- Outline.