H7P1002DS switching equivalent, silicon p channel mos fet high speed power switching.
* Low on-resistance RDS(on) = 85 mΩ typ. www.DataSheet4U.com
* Low drive current
* 4.5 V gate drive device can driven from 5 V source
Outline
RENESAS Package.
such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the .
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