H7P0601DS switching equivalent, silicon p channel mos fet high speed power switching.
* Low on-resistance RDS(on) = 40 mΩ typ.
* Low drive current
* 4.5 V gate drive device can driven from 5 V source
Outline
DPAK-2
D 4
DPAK-S
4
G 1 2 S 1 2 3.
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