Datasheet Details
| Part number | UPD5759T6J |
|---|---|
| Manufacturer | Renesas |
| File Size | 216.59 KB |
| Description | Low Noise and High Gain Amplifier |
| Datasheet |
 UPD5759T6J Datasheet
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General Description
The μPD5759T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone.
This device exhibits low noise and high voltage gain characteristics.
Key Features
- Low noise.
- : NV =.
- 98 dBV TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ : NV =.
- 99 dBV TYP. @VDD = 2.0 V, Cin = 5 pF, RL = 2.2 kΩ High gain : GV = +9.0 dB TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +11.0 dB TYP. @VDD = 2.0 V, Cin = 5 pF, RL = 2.2 kΩ Low input capacitance : Cinput = 2.0 pF TYP. @VDD = 2.0 V, RL = 2.2 kΩ Low consumption current : IDD = 310 μA TYP. @VDD = 2.0 V, RL = 2.2 kΩ High-density surface.