UPD5759T6J Datasheet, Renesas

* Low noise
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* : NV = −98 dBV TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ : NV = −99 dBV TYP. @VDD = 2.0 V, Cin = 5 pF, RL = 2.2 kΩ Hi.

* Microphone, Sensor etc. ORDERING INFORMATION Part Number μPD5759T6J-E4 Order Number μPD5759T6J-E4-A Package 3-pin.

R09DS0018EJ0100 Rev.1.00 Apr 18, 2011 The μPD5759T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics. T.