UPD5742T6J - LOW NOISE AND HIGH GAIN AMPLIFIER

Product Overview

Renesas

Datasheet Details

Part number	UPD5742T6J
Manufacturer	Renesas
File Size	115.22 KB
Description	LOW NOISE AND HIGH GAIN AMPLIFIER
Datasheet	UPD5742T6J Datasheet
Additional preview pages of the UPD5742T6J datasheet.

Product details

Description

The μPD5742T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone.This device exhibits low noise and high voltage gain characteristics.The package is 3-pin thin-type lead-less minimold, suitable for surface mount.

Features

Low Noise : NV =.
98 dBV TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ : NV =.
99 dBV TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ.
High Gain : GV = +9.0 dB TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +11.0 dB TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ.
Low Consumption Current : IDD = 370 μA TYP. @ VDD = 2 V, RL = 2.2 kΩ.
Built-in the capacitor for RF noise immunity.
High ESD voltage.
3-pin thin-type lead-less minimold.

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Published: Apr 1, 2016 |