UPD5758T6J - Low Noise and High Gain Amplifier

Product Overview

Renesas

Datasheet Details

Part number	UPD5758T6J
Manufacturer	Renesas
File Size	197.02 KB
Description	Low Noise and High Gain Amplifier
Datasheet	UPD5758T6J Datasheet
Additional preview pages of the UPD5758T6J datasheet.

Product details

Description

R09DS0017EJ0100 Rev.1.00 Apr 18, 2011 The μPD5758T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone.This device exhibits low noise and high voltage gain characteristics.The package is a 3-pin thin-type lead-less minimold, suitable for high-density surface mounting.

Features

Low noise.
: NV =.
101 dBV TYP. @VDD = 1.5 V, Cin = 3 pF, RL = 2.2 kΩ : NV =.
102 dBV TYP. @VDD = 1.5 V, Cin = 5 pF, RL = 2.2 kΩ High gain : GV = +5.7 dB TYP. @VDD = 1.5 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +7.7 dB TYP. @VDD = 1.5 V, Cin = 5 pF, RL = 2.2 kΩ Low input capacitance : Cinput = 1.5 pF TYP. @VDD = 1.5 V, RL = 2.2 kΩ Low consumption current : IDD = 190 μA TYP. @VDD = 1.5 V, RL = 2.2 kΩ High-density surfac.

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Published: Nov 10, 2013 |