Datasheet Details
| Part number | UPD5756T6N |
|---|---|
| Manufacturer | Renesas |
| File Size | 314.72 KB |
| Description | SiGe BiCMOS |
| Datasheet |
 UPD5756T6N Datasheet
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General Description
The μPD5756T6N is a low noise wideband amplifier IC with the through function mainly designed for the digital TV application.
This IC exhibits low noise figure and low distortion characteristics.
Key Features
- Low voltage operation.
- Low current consumption.
- : : : Operation frequency : Low noise : Low distortion : Low insertion loss : High-density surface mounting : VCC = 3.1 to 3.5 V (3.3 V TYP. ) ICC1 = 25 mA TYP. @VCC = 3.3 V (LNA-mode) ICC2 = 1 μA MAX. @VCC = 3.3 V (Bypass-mode) f = 40 to 1 000 MHz NF = 3.2 dB TYP. @f = 1 000 MHz (LNA-mode) IIP3 = +9 dBm TYP. @f1 = 500 MHz, f2 = 505 MHz (LNA-mode) Lins = 1.7 dB TYP. @f = 1 000 MHz (.