UPD5750T7D - SiGe BiCMOS

Renesas

The UPD5750T7D by Renesas is a SiGe BiCMOS. Below is the official datasheet preview.

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UPD5750T7D SiGe BiCMOS by Renesas - Datasheet Preview — Official preview page of the **UPD5750T7D** SiGe BiCMOS datasheet (Renesas).

Datasheet Details

Part number	UPD5750T7D
Manufacturer	Renesas
File Size	319.30 KB
Description	SiGe BiCMOS
Datasheet	UPD5750T7D_Renesas.pdf
Additional preview pages of the UPD5750T7D datasheet.

UPD5750T7D Product details

Description

R09DS0009EJ0100 Rev.1.00 Feb 24, 2011 The μPD5750T7D is a low noise wideband amplifier IC mainly designed for the portable digital TV application.This IC exhibits low noise figure and high power gain characteristics.The μPD5750T7D has an LNA pass-through function (bypass function) to prevent the degradation of the received signal quality at the strong electric field, and achieve the high reception sensitivity and low power consumption.The package is a 6-pin WLBGA (Wafer Level Ball Grid Arra

Features

Low voltage operation.
Low mode control voltage.
Low current consumption.
: VCC = 1.8 V TYP. : Vcont (H) = 1.0 V to VCC, Vcont (L) = 0 to 0.4 V : ICC = 3.1 mA TYP. @VCC = 1.8 V (LNA-mode) : ICC = 1 μA MAX. @VCC = 1.8 V (Bypass-mode) Low noise : NF = 1.5 dB TYP. @VCC = 1.8 V, f = 470 MHz (LNA-mode) : NF = 1.4 dB TYP. @VCC = 1.8 V, f = 770 MHz High gain : GP = 13.5 dB TYP. @VCC = 1.8 V, f = 470 MHz (LNA-mode) : GP = 12.5.

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Published: Nov 10, 2013 |