UPD5741T6J amplifier equivalent, low noise and high gain amplifier.
* Low Noise
: NV = −101 dBV TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ
: NV = −102 dBV TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ
* High Gain
: GV = +6.5 dB TY.
* Microphone, Sensor, etc.
ORDERING INFORMATION
Part Number
Order Number
Package
μPD5741T6J-E4
μPD5741T6J-E4-A.
The μPD5741T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for
electret condenser microphone. This device exhibits low noise and high voltage gain characteristics. The package is 3-pin thin-type lead-less .
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