UPA2826T1S datasheet, mosfet equivalent, Renesas

Features and benefits

* VDSS = 20 V (TA = 25°C)
* Low on-state resistance ⎯ RDS(on) = 4.3 mΩ MAX. (VGS = 8.0 V, ID = 13.5 A)
* 2.5 V Gate-drive available
* Small & thin type su.

Application

of portable equipment . R07DS0989EJ0100 Rev.1.00 Dec 25, 2012 Features
* VDSS = 20 V (TA = 25°C)
* Low on-state.

Description

The μ PA2826T1S is N-channel MOS Field Effect Transistor designed for power management applications of portable equipment . R07DS0989EJ0100 Rev.1.00 Dec 25, 2012 Features
* VDSS = 20 V (TA = 25°C)
* Low on-state resistance ⎯ RDS(on) = 4.3 mΩ.

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