UPA2811T1L transistor equivalent, mos field effect transistor.
* VDSS −30 V (TA = 25°C)
* Low on-state resistance ⎯ RDS(on) = 15 mΩ MAX. (VGS = −10 V, ID = −19 A)
* 4.5 V Gate-drive available
* Built-in gate protectio.
of portable equipment.
Features
* VDSS −30 V (TA = 25°C)
* Low on-state resistance ⎯ RDS(on) = 15 mΩ MAX. (VGS .
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