UPA2811T1L datasheet, transistor equivalent, Renesas

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Features and benefits

* VDSS −30 V (TA = 25°C)
* Low on-state resistance ⎯ RDS(on) = 15 mΩ MAX. (VGS = −10 V, ID = −19 A)
* 4.5 V Gate-drive available
* Built-in gate protectio.

Application

of portable equipment. Features
* VDSS −30 V (TA = 25°C)
* Low on-state resistance ⎯ RDS(on) = 15 mΩ MAX. (VGS .

Description

R07DS0191EJ0100 Rev.1.00 Jan 11, 2011 The μ PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features
* VDSS −30 V (TA = 25°C)
* Low on-state resistanc.

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