UPA2810 datasheet, transistor equivalent, Renesas

Features and benefits

* Low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = −10 V, ID = −13 A) RDS(on)2 = 23 mΩ MAX. (VGS = −4.5 V, ID = −6.5 A)
* Built-in gate protection diode
*.

Application

of portable equipments. FEATURES
* Low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = −10 V, ID = −13 A) RDS(on)2.

Description

The μ PA2810 is P-channel MOSFET designed for DC/DC converter and power management applications of portable equipments. FEATURES
* Low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = −10 V, ID = −13 A) RDS(on)2 = 23 mΩ MAX. (VGS = −4.5 V, ID = .

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