UPA2816T1S datasheet, mosfef equivalent, Renesas

Features and benefits

* VDSS = −30 V (TA = 25°C)
* Low on-state resistance ⎯ RDS(on) = 15.5 mΩ MAX. (VGS = −10 V, ID = −17 A)
* 4.5 V Gate-drive available
* Small & thin type s.

Application

of portable equipment. R07DS0778EJ0101 Rev.1.01 May 28, 2013 Features
* VDSS = −30 V (TA = 25°C)
* Low on-state.

Description

The μPA2816T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. R07DS0778EJ0101 Rev.1.01 May 28, 2013 Features
* VDSS = −30 V (TA = 25°C)
* Low on-state resistance.

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