UPA2765T1A datasheet, mosfet equivalent, Renesas

Features and benefits

* VDSS = 30 V (TA = 25°C)
* Low on-state resistance ⎯ RDS(on) = 1.3 mΩ MAX. (VGS = 10 V, ID = 46 A) ⎯ RDS(on) = 2.9 mΩ MAX. (VGS = 4.5 V, ID = 32 A)
* 4.5 V G.

Application

for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; .

Description

The μ PA2765T1A is N-channel MOS Field Effect Transistor designed for high current switching application. R07DS0882EJ0102 Rev.1.02 Nov 28, 2012 Features
* VDSS = 30 V (TA = 25°C)
* Low on-state resistance ⎯ RDS(on) = 1.3 mΩ MAX. (VGS = 10 V,.

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