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UPA2762UGR Datasheet, Renesas

UPA2762UGR transistor equivalent, mos field effect transistor.

UPA2762UGR Avg. rating / M : 1.0 rating-11

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UPA2762UGR Datasheet

Features and benefits


* Low on-state resistance ⎯ RDS(on)1 = 13.5 mΩ MAX. (VGS = 10 V, ID = 12 A) ⎯ RDS(on)2 = 22 mΩ MAX. (VGS = 4.5 V, ID = 10 A)
* Low Ciss: Ciss = 710 pF TYP. (VDS =.

Application

of a notebook computer. Features
* Low on-state resistance ⎯ RDS(on)1 = 13.5 mΩ MAX. (VGS = 10 V, ID = 12 A) ⎯ RDS(.

Description

R07DS0011EJ0100 Rev.1.00 Jun 01, 2010 The μ PA2762UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer. Features
* Low on-state resistance ⎯ RDS(on)1 = 13.5 mΩ MAX. (VGS = 10 V, ID = 12.

Image gallery

UPA2762UGR Page 1 UPA2762UGR Page 2 UPA2762UGR Page 3

TAGS

UPA2762UGR
MOS
FIELD
EFFECT
TRANSISTOR
UPA2761UGR
UPA2763
UPA2764T1A
Renesas

Manufacturer


Renesas (https://www.renesas.com/)

Related datasheet

UPA2762UGR

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