EFFECT Datasheet | Specifications & PDF Download

Features ─ Miniature construction ─ Low-Noise Output ─ 4.5 V to 6 V Operation ─ Magnetically Optimized Package ─ Linear output for circuit design flex

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www.irantk.ir XY6112 Cost-effective off-line switching power supply controller - Shanghai Vision Institute of Electronic Technology Co., Ltd. Page 1 o

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R

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  N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  25V  D RDSON (MAX.)  6mΩ  ID  80A  G   UIS, Rg 100%

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Data Sheet SINGLE PHASE HALL EFFECT LATCH General Description The AH477A is an integrated Hall sensor with Hbridged output driver designed for brushle

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SS41F Low Gauss Bipolar Hall-effect Sensor DESCRIPTION The SS41F is a sensitive, bipolar Hall-effect sensor. This magnetic sensor offers reverse powe

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W W W .ORIENT-1 2C 3HIP.COM ◼ # General Description The OCH1931 is a small, versatile linear Hall-effect device that is operated by the magnetic f

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OB3350 Cost Effective LED Controller GENERAL DESCRIPTION OB3350 is a highly integrated and cost effective Light Emitting Diode (LED) driver optimized

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OCS Confidential DO NOT COPY OCH2987 350mA Single Phase Hall-Effect DC Fan Driver  General Description The OCH2987 is an integrated Hall sensor w

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DISCRETE SEMICONDUCTORS DATA SHEET J174; J175; J176; J177 P-channel silicon field-effect transistors Product specification File under Discrete Semico

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HI-SINCERITY MICROELECTRONICS CORP. H01N60 Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termi

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.05.12 Page No. : 1/6 H06N60 Series N-Channel

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DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ132, 2SJ132-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES • Gate drive available at logic level (

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplif

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SMD Type TransistIoCrs MOS Field Effect Transistors 2SK2484 Features Low On-state Resistance:RDS(on)=2.8 max.(VGS=10V,ID=3.0A) Low Ciss Ciss=1200pF

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DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product specification File under Discrete Semiconducto

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9mΩ ID 50A G UIS, Rg 100% Tested S

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.05.12 Page No. : 1/6 H06N60 Series N-Channel

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DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product specification File under Discrete Semiconducto

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