UPA2761UGR transistor equivalent, mos field effect transistor.
* Low on-state resistance ⎯ RDS(on)1 = 18.5 mΩ MAX. (VGS = 10 V, ID = 9 A) ⎯ RDS(on)2 = 30 mΩ MAX. (VGS = 4.5 V, ID = 7 A)
* Low Ciss: Ciss = 550 pF TYP. (VDS = 1.
of a notebook computer.
Features
* Low on-state resistance ⎯ RDS(on)1 = 18.5 mΩ MAX. (VGS = 10 V, ID = 9 A) ⎯ RDS(o.
R07DS0010EJ0100 Rev.1.00 Jun 01, 2010
The μ PA2761UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer.
Features
* Low on-state resistance ⎯ RDS(on)1 = 18.5 mΩ MAX. (VGS = 10 V, ID = 9 .
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