* Low on-state resistance RDS(on)1 = 29 mΩ MAX. (VGS = −4.5 V, ID = −7.2 A) RDS(on)2 = 41 mΩ MAX. (VGS = −2.5 V, ID = −3.6 A) RDS(on)3 = 81 mΩ MAX. (VGS = −1.8 V, ID .

of portable equipments, such as load switch. FEATURES
* Low on-state resistance RDS(on)1 = 29 mΩ MAX. (VGS = −4.5 V.

The μ PA2210T1M is P-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch. FEATURES
* Low on-state resistance RDS(on)1 = 29 mΩ MAX. (VGS = −4.5 V, ID = −7.2 A) RDS(on)2 = 41 m.

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