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UPA2201T1M Datasheet, Renesas

UPA2201T1M transistor equivalent, n-channel mos field effect transistor.

UPA2201T1M Avg. rating / M : 1.0 rating-11

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UPA2201T1M Datasheet

Features and benefits


* Low on-state resistance RDS(on)1 = 18.5 mΩ MAX. (VGS = 4.5 V, ID = 9 A) RDS(on)2 = 27 mΩ MAX. (VGS = 2.5 V, ID = 4.5 A)
* Built-in gate protection diode
* 2.

Application

of portable equipments, such as load switch. FEATURES
* Low on-state resistance RDS(on)1 = 18.5 mΩ MAX. (VGS = 4.5 .

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UPA2201T1M Page 1 UPA2201T1M Page 2 UPA2201T1M Page 3

TAGS
UPA2201T1M
N-CHANNEL
MOS
FIELD
EFFECT
TRANSISTOR
UPA2200T1M
UPA2210T1M
UPA2211T1M
Renesas
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