UPA2201T1M Datasheet, Renesas

* Low on-state resistance RDS(on)1 = 18.5 mΩ MAX. (VGS = 4.5 V, ID = 9 A) RDS(on)2 = 27 mΩ MAX. (VGS = 2.5 V, ID = 4.5 A)
* Built-in gate protection diode
* 2.

of portable equipments, such as load switch. FEATURES
* Low on-state resistance RDS(on)1 = 18.5 mΩ MAX. (VGS = 4.5 .

The μ PA2201T1M is N-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch. FEATURES
* Low on-state resistance RDS(on)1 = 18.5 mΩ MAX. (VGS = 4.5 V, ID = 9 A) RDS(on)2 = 27 mΩ .