UPA2211T1M fet equivalent, p-channel mos fet.
* Low on-state resistance
RDS(on)1 = 25 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A) RDS(on)2 = 34 mΩ MAX. (VGS = −2.5 V, ID = −3.8 A) RDS(on)3 = 66 mΩ MAX. (VGS = −1.8 V, ID .
of portable equipments, such as load switch.
FEATURES
* Low on-state resistance
RDS(on)1 = 25 mΩ MAX. (VGS = −4.5 V.
Image gallery
Download