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RJP60F7DPK Datasheet, Renesas

RJP60F7DPK igbt equivalent, igbt.

RJP60F7DPK Avg. rating / M : 1.0 rating-11

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RJP60F7DPK Datasheet

Features and benefits


* Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
* Trench gate and thin wafer technology
* High spee.

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RJP60F7DPK Page 1 RJP60F7DPK Page 2 RJP60F7DPK Page 3

TAGS

RJP60F7DPK
IGBT
RJP60F0DPE
RJP60F0DPM
RJP60F4DPM
Renesas

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